Ultrasonic Sputtering Target Bonding Machine

No Flux · Ultra-Precision Indium Bonding · Wide Material Compatibility

MECSTECH’s ultrasonic sputtering target bonding system is optimized for flux-free indium bonding of various sputtering targets and backing plates, including ITO, Al, Mo, Cu, Cr, and Si.

By applying ultrasonic vibration, oxide layers on the bonding surfaces are removed, enabling strong and reliable bonds to be formed even at low temperatures. This ensures uniform bonding quality and high long-term reliability.

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Key Features

Flux-free indium bonding for clean joint interfaces and environmentally friendly processing

Compatible with a wide range of targets and backing plates, including ITO, Al, Mo, Cu, Cr, and Si

Suitable for ceramic-to-ceramic, metal-to-metal, and ceramic-to-metal bonding

Supports bonding of flat and cylindrical sputtering targets as well as plate materials

Automation-ready for indium and tin bonding through integration with automated machinery

Available in manual and large-format bonding systems suitable for mass production

Stable and consistent bonding quality ensured through uniform amplitude control

RS-232C / RS-485 ultrasonic data communication support (optional)

Specifications

Model No.

MR – 1030C

Frequency

30 kHz ± 1 kHz

Max Output

1000 W

Temperature Range

150~500℃

Line voltage

AC220V (Single phase) / 60 Hz

Ultrasonic Generator

Size

Weight

434(W) × 600(L) × 140(H) mm

20 kg

Horn Size

50(W) × 10(T) × 85(H) mm

Horn Material

Titanium

Handle Length

340 mm